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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C
SPM6G120-120D
Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation
DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 500uA, VGE = 0V Continuous Collector Current TC = 25 OC
O
BVCES IC ICES
1200 -
-
120 80 2 15
V A
TC = 80 C Zero Gate Voltage Collector Current (For the module) VCE = 1200 V, VGE=0V Ti=25oC VCE = 800 V, VGE=0V Ti=125 C Collector to Emitter Saturation Voltage, IC = 80A, VGE = 15V, IGBT Internal Turn On Gate Resistance IGBT Internal Turn Off Gate Resistance IGBT Internal Soft Shutdown Turn Off Gate Resistance IGBT turn-on switching loss VCE = 600 V, IC = 40A Tj=25oC IGBT turn-off switching loss VCE = 600 V, IC = 40A Tj=25oC Short Circuit Withstand Time, Conditions 600V DC link, VGE=15V, Tjstart < 175 C DC Bus Voltage Rate of Rise With 15V Supply Removed, dv/dt Junction To Case Thermal Resistance
O o
mA mA V
Tj = 25 OC Tj = 125 C
O
VCE(SAT)
-
1.9 2.2
2.3
RJC -
30 10 100 5.0 3.8 10 -
20 0.27
Ohm Ohm Ohm mJ mJ usec V/usec
o
C/W
MODULE TOTAL WEIGHT
Total Weight 13 OZ
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C Brake IGBT SPECIFICATIONS
Continuous Collector Current (Limited by Terminals) Pulsed Collector Current, 0.5mS IGBT Internal Gate Resistance IGBT Internal Gate Shunt Resistance Junction To Case Thermal Resistance RJC TC = 25 OC TC = 90 C ICM 10 10 O
SPM6G120-120D
IC
-
-
50 30 100 0.35
o
A A Ohm K Ohm C/W
ULTRAFAST DIODES RATING AND CHARACTERISTICS
Diode Peak Inverse Voltage Continuous Forward Current, TC = 90 C Diode Forward Voltage, IF = 80A
O
PIV IF VF trr
1200 -
1.8 500 1.6 -
80 2.3 700 0.45
o
V A V nsec mJ C/W
Diode Reverse Recovery Time (IF=40A, VRR=600V , di/dt = 600 A/s) Diode switching loss VCE = 600 V, IF = 40A Tj=25oC Junction To Case Thermal Resistance
RJC
-
MODULE STORAGE AND OPERATING CONDITIONS
Operating Junction Temperature Storage Ambient Temperature Operating Case Temperature Operating Ambient Temperature Operating Altitude Tj TStorage Tc TA -40 -55 -40 -40 15000 150 150 85 105 o o o o
C C C C
Ft
Vibration and shock requirements (1)
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C Gate Driver
Supply Voltage, limits apply to Vcc Magnetic -Isolator Logic Low Input Threshold Magnetic -Isolator Logic High Input Threshold Under Voltage Lockout, positive going threshold Vcc, Under Voltage Lockout, negative going threshold Vcc Internal Bootstrap Capacitor Value Desaturation Detection, High Input Threshold Voltage Desaturation Detection, Low Input Threshold Voltage Logic Input to Phase Output Turn On Delay Output Turn On Rise Time Logic Input to Phase Output Turn Off Delay Output Turn Off Fall Time at VCC=600V, IC=50A, TC = 25 Dead Time Requirement, for Shoot Through Prevention Magnetic -Isolator Operating Input Common Mode Voltage Magnetic -Isolator Operating Input Common Mode Transient Module Isolation Gnd2 Isolation To Phase Lines, and to Gnd1 (Device will be tested at 3000V for 10 seconds), leakage less than 10uA Pin-To-Case Isolation Voltage, DC Voltage (Device will be tested at 3000V for 10 seconds), leakage less than 10uA +5V output, power supply Referenced to Gnd1 Maximum load current
(2)
SPM6G120-120D
Vcc ViL ViH VCCUV VCCUV
14 11.8 11.3 -
15 0.3VDD 0.7VDD 12.2 11.8 12 8.0 7.0 650 100 800 150
16 12.7 12.2 800 200 1200 200 1000 15
V V V V V uF V V nsec
tond tr toffd tf
-
750 -
1000 -
nsec V KV/usec
-
2500
-
-
VDC
2500
-
-
VDC
4.75 VDD 4.75
5 5
5.25 30 5.25
V mA V
+5V Input, Isolated power supply Referenced to Gnd2
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C Base Plate Temperature (2)
Base Plate Temperature Sensor Output Gain Referenced to Gnd2 Temperature Sensor Output DC Offset, at TC=25oC Referenced to Gnd2 Accuracy, at temperature range from - 40 oC to 125 oC Tco 6.25 424 +/-4.0
SPM6G120-120D
-
mV/oC mV
o
C
DC Bus Current Sensor (Bi-directional Output)
Shunt Resistor Value Current Amplifier Gain, measured at Pin 22 and Referenced to Gnd1 (Non-isolated output) Current Amplifier DC Offset (Zero DC Bus Current), measured at Pin 22 Over-Current Set Point Isolated PWM fixed frequency output at Pin 17 Isolated PWM output Duty cycle at Pin 17 , AT + 82 A , AT - 82 A 0.0023 -10 75 100 0.50 0.0026 0 85 130 91% 9% 0.0030 10 120 180 mOhm V/A mV A KHz
Phase A, Phase B, and Phase C Current Sensors (Bi-directional Output) (2)
Current Amplifier Gain Referenced to Gnd2 Output DC Reference at Pins 1, 3, 5 +/0.0160 VDD/2 - 0.04 Current Amplifier DC Offset (Zero Phase Current) Measured between Pins (1,2), (3,4), (5,6) Offset temperature Drift mV/ oC, Ta = -40 oC to 125 oC Maximum Current Measurement Range -0.3 0 +/-110 +0.3 mV/ oC A - 0.02 0 +/-0.0175 VDD/2 +/0.0195 VDD/2 +0.04 +0.02 V V/A V
(1) Unit is designed to meet ....Vibration and Shock requirements, Mil-STD-810F shall be used. (514.5 and 516.5 methods respectively). (2) Phase current sensors and base plate temperature sensor are floating sensors referenced to Gnd2. An isolated 5V power supply shall be used to power these sensors.
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C Pinout
Pin # 1 Function ICd DC offset of VDD/2 +/- 0.040V for Differential Output Reading of Output at Pin 2 2 3 ICo, Phase C Current Sensor output IBd DC offset of VDD/2 +/- 0.040V for Differential Output Reading of Output at Pin 4 4 5 IBo, Phase B Current Sensor output IAd DC offset of VDD/2 +/- 0.040V for Differential Output Reading of Output at Pin 6 6 IAo, Phase A Current Sensor output 22 21 19 20 Pin # 18
SPM6G120-120D
Function VDD +5V Input Return for all Input/outputs at Pins 1 to 18 (Signal Ground, Gnd2) Isolated SD Input
Itrip-Ref 1
Adjustable Reference for over-Current Shutdown
Itrip-Ref 2
Adjustable Reference for over-Current Shutdown
7 TCo Case Temperature Output with a gain of 6.25 mV/oC 8 9 10 11 Isolated Input for Low-side IGBT of Phase A Isolated Input for High-side IGBT of Phase A Isolated Input for Low -side IGBT of Phase B Isolated Input for High-side IGBT of Phase B 24 25 26,27 28 +15V Rtn (Signal Ground, Gnd1) +15V Input Brake Terminal. Brake Resistor Shall be Connected Between These Terminals and +VDC Brake IGBT Gate Input Brake IGBT Emitter input is internally connected to DC Bus return 12 13 14 15 16 17 Isolated Input for Low-side IGBT of Phase C Isolated Input for High-side IGBT of Phase C Isolated Flt Clear Input Isolated SD output Isolated Flt output Isolated Idco output Case Isolated 29 to 32 33 to 36 37 to 39 40 to 42 43 to 45 DC Bus return DC Bus "+VDC" input Phase C output Phase B output Phase A output 23 +5V Output
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C Block Diagram
SPM6G120-120D
+15V +15V-Rtn Signal Ground Lin-A Hin-A Lin-B Hin-B Lin-C Hin-C Flt-CLr SD Out
Gnd1
LIN-A
+5V-in Gnd2
M agnetic Isiolation
HIN-A LIN-B HIN-B LIN-C
+VDC PH-A IAo = 2.5V +/- 0.0175 IA IAd = 2.5V
Encoder/ Decoder
HIN-C Flt-CLr Flt
+5V-in Gnd2 PH-B IBo = 2.5V +/- 0.0175 IBd = 2.5V +5V-in Gnd2 PH-C ICo = 2.5V +/- 0.0175 IC ICd = 2.5V
Flt Idco +5V-in Gnd2 SD Input +5V-out
Analog to PW M 130KHz To-SD SD
10 R1 1K 1nF R2 5K G=6.32 0.0005 10K
BRK G-Brk E-Brk +VDC Rtn
I trip-Ref 1 I trip-Ref 2 TCo
5K 10nF Gnd2 Heat-Sink Tem perature Sensor
Fig. 1. Block Diagram
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C
SPM6G120-120D
Fig. 2. Package Drawing
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C
SPM6G120-120D
Fig. 3. Device Marking
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C
SPM6G120-120D
Normalized Thermal Impedance Curves for Both IGBTs and Diodes
D = 0.50 D = 0.20 D = 0.10 D = 0.05 SINGLE PULSE (THERMAL RESPONSE)
Figure 4.
Normalized Transient Thermal Impedance, Junction-to-Case (IGBT)
D = 0.50 D = 0.20 D = 0.10 D = 0.05 SINGLE PULSE (THERMAL RESPONSE)
Figure 5. Normalized Transient Thermal Impedance, Junction-to-Case (Diode)
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C Pin Descriptions
ICd ( Pin 1 ), is a +2.5V DC offset used for differential output reading of ICo.
SPM6G120-120D
ICo ( Pin 2 ), is hall current sensor output for phase C. The output can be measured between Pin2 and Pin 1 differentially. Zero current corresponds to zero output, current entering Phase C pins will produce positive output voltage at Pin2, and current out of Phase C pins will produce negative output voltage at Pin2. Also, the output can be measured as single ended between Pin2 and Pin19. In this case zero current will correspond to 2.5V output, current entering Phase C pins will produce positive output voltage above 2.5V, and current out of Phase C pins will produce positive output voltage below 2.5V. The sensitivity of this sensor is 0.018V/A. IBd ( Pin 3 ), is a +2.5V DC offset used for differential output reading of IBo. IBo ( Pin 4 ), is hall current sensor output for phase B. The output can be measured between Pin4 and Pin 3 differentially. Zero current corresponds to zero output, current entering Phase B pins will produce positive output voltage at Pin4, and current out of Phase B pins will produce negative output voltage at Pin4. Also, the output can be measured as single ended between Pin4 and Pin19. In this case zero current will correspond to 2.5V output, current entering Phase B pins will produce positive output voltage above 2.5V, and current out of Phase B pins will produce positive output voltage below 2.5V. The sensitivity of this sensor is 0.018V/A. IAd ( Pin 5 ), is a +2.5V DC offset used for differential output reading of IAo. IAo ( Pin 6 ), is phase A hall current sensor output. The output can be measured between Pin6 and Pin 5 differentially. Zero current corresponds to zero output, current entering Phase A pins will produce positive output voltage at Pin6, and current out of Phase A pins will produce negative output voltage at Pin6. Also, the output can be measured as single ended between Pin6 and Pin19. In this case zero current will correspond to 2.5V output, current entering Phase A pins will produce positive output voltage above 2.5V, and current out of Phase A pins will produce positive output voltage below 2.5V. The sensitivity of this sensor is 0.018V/A. TCo ( Pin 7 ), is an analog output of case temperature sensor. The sensor output gain is 6.25mV/oC, with 424 mV DC offset. This sensor can measure both positive and negative oC. The internal impedance of this output is 4.99K. The internal block diagram of the temperature sensor is shown in Fig. 6.
4.99K Pin 7
Vo= (+6.25mV/oC )*ToC + 424 mV
10nF
Pin 19 Gnd2
Fig. 6 Temperature Sensor Internal Block Diagram
The output voltage reading vs temperature will be: TCo = + 0.58V at Tc= +25oC TCo = + 1.205V at Tc= +125oC TCo = + 0.174V at Tc= -40oC (c)2003 Sensitron Semiconductor * 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 10
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C
LinA ( Pin 8 ), is an isolated drive input for Low-side IGBT of Phase A. HinA ( Pin 9 ), is an isolated drive input for High-side IGBT of Phase A. LinB- ( Pin 10 ), is an isolated drive input for Low-side IGBT of Phase B. HinB ( Pin 11 ), is an isolated drive input for High-side IGBT of Phase B. LinC ( Pin 12 ), is an isolated drive input for Low-side IGBT of Phase C. HinC ( Pin 13 ), is an isolated drive input for High-side IGBT of Phase C.
SPM6G120-120D
Flt-Clr( Pin 14 ), is a fault clear input. It can be used to reset a latching fault condition, due to desaturation protection. Pin 14 an active high input. It is internally pulled down by 20.0K. A latching fault due to desaturation can be cleared by pulling this input high to +5V. It is recommended to activate fault clear input for more than 500 sec at startup. * To charge boot-strap circuit at startup, it is recommended to turn on all low-side switches for 500 sec while Flt-Clr is active.
SD Out ( Pin 15 ),.is internally activated due to desaturation protection, over-current shutdown, or under voltage lockout. Desaturation shutdown is a latching feature. SD Out can be used as a fault condition output. A continuous low output at SD out indicates a latching fault situation. Flt ( Pin 16 ), It is internally pulled down by 20.0K. Pin 16, reports desaturation protection activation. When desaturation protection is activated a low output for about 9 sec is reported. If any other protection feature is activated, it will not be reported by Pin 16. Idco ( Pin 17 ), is DC bus bi-directional current sense output. The sensor output is isolated. It is a PWM signal with fixed frequency and variable duty cycle. The PWM frequency is 130 KHz. The maximum duty cycle is 91%, corresponding to 82 A. Minimum duty cycle is 9%, corresponding to - 82A. VDD, +5V-in ( Pin 18 ), is the +5V input biasing supply connection for the phase current sensors, magnetic isolators, and temperature sensor. Pin 18 should be connected to an isolated 5V power supply, recommended limits are 4.75V to 5.25V. The return of this input is pin 19. Recommended power supply capability for VDD is about 50mA. Gnd2 ( Pin 19 ), is signal ground for +5V-in,. This pin is internally floating for flexibility. The phase current sensors and temperature sensor are referenced to Gnd2. Gnd2 isolation from Gnd1 is over 2500V. SD Input ( Pin 20 ),.is SD input. A high input will disable all gate drive signals. This input is internally pulled high to +5V by 20 K ohms.
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C
Itrip-Ref1 ( Pin 21 ), is an adjustable voltage divider reference for over-current shutdown. Itrip-Ref2 ( Pin 22 ), is an adjustable voltage divider reference for over-current shutdown. The internal set point over-current shutdown is 82A. The re-start delay time is about 0.50 msec. +5V Output ( Pin 23 ), is a +5V output. Maximum output current is 30mA. Gnd1 ( Pin 24 ), is signal ground for +15V-in,. This pin is internally connected to DC Bus return. No external connection shall be established between Signal Gnd1 and +VDC Rtn. Gnd1 is isolated from Gnd2. Note that Pins 21 to 23 are referenced to Gnd1.
SPM6G120-120D
+15V-in (Vcc) ( Pin 25 ), is the +15V input biasing supply connection for the controller. Under-voltage lockout keeps all outputs off for Vcc below 11.5V. Vcc pin should be connected to an isolated 15V power supply. Vcc recommended limits are 14V to 16V , and shall not exceed 18V. The return of Vcc is pin 24. Recommended power supply capability is about 70mA. Brk ( Pins 26,27 ), is Brake Terminal. Brake Resistor shall be connected between these terminals and +VDC. If the brake resistor is inductive, a freewheeling diode shall be connected across this resistor. Gbrk ( Pin 28 ), is Brake IGBT Gate Input. Brake IGBT Emitter is internally connected to DC Bus return. +VDC Rtn ( Pins 29 to 32 ), is DC Bus return. +VDC (Pins 33 to 36 ), is +DC Bus input. PhC (Pins 37 to 39 ), is Phase C output. PhB (Pins 40 to 42 ), is Phase B output. PhA (Pins 43 to 45 ), is Phase A output.
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C
A- DC Bus Charging from 15V
D1
SPM6G120-120D
Vcc +15V
R1 100K
D2 DSH Q1H VBS D3
+VDC
R2 100K
700 K
DSL
700 K
*
PhA
Q1L
+15V Rtn Sgnl Gnd1
Gate Driver
+VDC Rtn
Figure 7. Charging Path from 15V Supply to DC Bus when DC Bus is off
* * * * * Each IGBT is protected against desaturation. D2 is the desaturation sense diode for the high-side IGBT D3 is the desaturation sense diode for the low-side IGBT When the DC bus voltage is not applied or below 15V, there is a charging path from the 15V supply to the DC bus through D2 and D3 and the corresponding pull up 100K Ohm resistor. The charging current is 0.15mA per IGBT. Total charging current is about 1.5mA. Do not apply PWM signal if the DC bus voltage is below 20V.
B- Bias For Desaturation Detection Circuit:
The desaturation detection is done by diode D2 for the high side IGBT Q1H, and by diode D3 for the low side IGBT Q1L. The internal detection circuit, input DSH for the high-side and input DSL for the low-side, is biased by the local supply voltage VCC for the low side and VBS for the high side. When the IGBT is on the corresponding detection diode is on. The current flowing through the diode is determined by the internal pull resistor, R1 for the high side and R2 for the low side. To minimize the current drain from VCC and VBS, R1 and R2 are set to be 100K. Lower value of R1 will overload the bootstrap circuit and reduce the bootstrap capacitor holding time.
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C
SPM6G120-120D
IGBT and Diode Switching Characteristics and Waveforms
g.1- Test Conditions: VCE=600V, IC= 40A Test Results: Rise time tr= 100 nsec, Fall time tf= 150 nsec Current Scale is 10A/div, Voltage Scale is 100V/div, Power Loss Scale is 5000Watt/div Turn On Switching Loss = 5 mJ, Turn Off Switching Loss = 3.8 mJ Diode Switching Loss = 1.6mJ
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4100, Rev. C
SPM6G120-120D
Cleaning Process: Suggested precaution following cleaning procedure: If the parts are to be cleaned in an aqueous based cleaning solution, it is recommended that the parts be baked immediately after cleaning. This is to remove any moisture that may have permeated into the device during the cleaning process. For aqueous based solutions, the recommended process is to bake for at least 2 hours at 125oC. Do not use solvents based cleaners. Recommended Soldering Procedure: Signal pins 1-25: 210C for 10 seconds max Power pins 26-45: 260C for 10 seconds max. Pre-warm module to 125C to aid in power pins soldering. Ordering Information: SPM6G120-120D is a standard product with all the features listed in the data sheet. SPM6G120-120D-A, is a standard product with all the features listed in the data sheet except Pins 26, 27,28 are removed. The associated circuits with these Pins are removed. SPM6G120-120D-B, is a standard product with all the features listed in the data sheet except Pins 17,21,22,26, 27,28 are removed or not connected. The associated circuits with these Pins are removed.
DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
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